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| 型号 | NCP5181DR2G |
| 厂商 | ON Semiconductor |
| 描述 | IC MOSFET DRVR HIGH VOLT 8-SOIC |
| NCP5181DR2G PDF |  |
| 代理商 | NCP5181DR2G |
| 标准包装 | 1 |
| 配置 | 半桥 |
| 输入类型 | 非反相 |
| 延迟时间 | 100ns |
| 电流 - 峰 | 1.4A |
| 配置数 | 1 |
| 输出数 | 2 |
| 高端电压 - 最大（自引导启动） | 600V |
| 电源电压 | 10 V ~ 20 V |
| 工作温度 | -40°C ~ 125°C |
| 安装类型 | 表面贴装 |
| 封装/外壳 | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装 | 8-SOICN |
| 包装 | 标准包装 |
| 其它名称 | NCP5181DR2GOSDKR |
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